1/9 february 2003 STGE200NB60S n-channel 100a - 600v -isotop powermesh? igbt n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix s identifies a family optimized to achieve very low v ce(sat) (@ max frequency of 1khz). applications n low frequency motor controls n aluminum welding equipment absolute maximum ratings ( ) pulse width limited by safe operating area type v ces v ce(sat) (typ.) i c t c STGE200NB60S 600 v 1.1 v 1.3 v 100 a 200 a 100c 25c symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 200 a i c collector current (continuos) at t c = 100c 100 a i cm ( ) collector current (pulsed) 800 a p tot total dissipation at t c = 25c 600 w derating factor 4.8 w/c t stg storage temperature C 65 to 150 c t j max. operating junction temperature 150 c isotop internal schematic diagram
STGE200NB60S 2/9 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 0.20 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-h thermal resistance case-heatsink typ 0.1 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 500 a v ce = max rating, t c = 125 c 5ma i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge =15v,i c = 100 a 1.2 1.6 v v ge =15v,i c =100 a, tj =125c 1.0 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =15v , i c =100a 80 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce =25v,f=1mhz,v ge =0 15600 11 00 95 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c = 100 a, v ge =15v 560 70 170 nc nc nc i cl latching current v clamp = 480 v tj = 125c , r g =10 w 300 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c = 100 a r g =2 w ,v ge =15v 64 112 s s (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c = 100 a r g =2 w v ge = 15 v,tj = 125c 1800 12 a/s mj
3/9 STGE200NB60S electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 100 a, r ge =2 w ,v ge =15v 2.98 s t r (v off ) off voltage rise time 1.7 s t d ( off ) delay time 2.4 s t f fall time 1.23 s e off (**) turn-off switching loss 59 mj e ts total switching loss 71 mj t c cross-over time v cc = 480 v, i c = 100 a, r ge =2 w ,v ge =15v tj = 125 c 4.52 s t r (v off ) off voltage rise time 2.6 s t d ( off ) delay time 2.8 s t f fall time 1.8 s e off (**) turn-off switching loss 92 mj e ts total switching loss 105 mj
STGE200NB60S 4/9 normalized gate threshold voltage vs temp. transconductance transfer characteristics switching off safe operating area output characteristics thermal impedance
5/9 STGE200NB60S total switching losses vs temperature total switching losses vs gate resistance capacitance variations normalized break-down voltage vs temp. gate-charge vs gate-emitter voltage collector-emitter on voltage vs temperature
STGE200NB60S 6/9 collector-emitter on voltage vs current total switching losses vs ic
7/9 STGE200NB60S fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
STGE200NB60S 8/9 dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n4 0.157 o 7.8 8.2 0.307 0.322 b e h o n j k l m f a c g d isotop mechanical data
9/9 STGE200NB60S information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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